v ces = 1200v v ce(on) typ. = 3.17v @v ge = 15v, i c = 5.0a absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 11 i c @ t c = 100c continuous collector current 5.0 a i cm pulsed collector current ? 22 i lm clamped inductive load current ? 22 t sc short circuit withstand time 10 s v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 130 mj p d @ t c = 25c maximum power dissipation 60 w p d @ t c = 100c maximum power dissipation 24 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) IRG4PH20K short circuit rated ultrafast igbt insulated gate bipolar transistor pd -91776 parameter typ. max. units r q jc junction-to-case CCC 2.1 r q cs case-to-sink, flat, greased surface 0.24 CCC c/w r q ja junction-to-ambient, typical socket mount CCC 40 wt weight 6 (0.21) CCC g (oz) thermal resistance to-247ac e c g n-channel features benefits ? high short circuit rating optimized for motor control, t sc =10s, v cc = 720v , t j = 125c, v ge = 15v ? combines low conduction losses with high switching speed ? latest generation design provides tighter parameter distribution and higher efficiency than previous generations ? as a freewheeling diode we recommend our hexfred tm ultrafast, ultrasoft recovery diodes for minimum emi / noise and switching losses in the diode and igbt ? latest generation 4 igbt's offer highest power density motor controls possible www.irf.com 1 6/25/98
IRG4PH20K 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) 28 43 i c = 5.0a q ge gate - emitter charge (turn-on) 4.4 6.6 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 12 18 v ge = 15v t d(on) turn-on delay time 23 t r rise time 26 t j = 25c t d(off) turn-off delay time 93 140 i c =5.0a, v cc = 960v t f fall time 270 400 v ge = 15v, r g = 50 w e on turn-on switching loss 0.45 energy losses include "tail" e off turn-off switching loss 0.44 mj see fig. 9,10,14 e ts total switching loss 0.89 1.2 t sc short circuit withstand time 10 s v cc = 720v, t j = 125c v ge = 15v, r g = 50 w t d(on) turn-on delay time 23 t j = 150c, t r rise time 28 i c = 5.0a, v cc = 960 t d(off) turn-off delay time 100 v ge = 15v, r g = 50 w t f fall time 620 energy losses include "tail" e ts total switching loss 1.7 mj see fig. 10,11,14 l e internal emitter inductance 13 nh measured 5mm from package c ies input capacitance 435 v ge = 0v c oes output capacitance 44 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 8.3 ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 18 v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage 1.13 v/c v ge = 0v, i c = 2.5ma 3.17 4.3 i c = 5.0a v ge = 15v v ce(on) collector-to-emitter saturation voltage 4.04 i c = 11a see fig.2, 5 2.84 i c = 5.0a , t j = 150c v ge(th) gate threshold voltage 3.5 6.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -10 mv/c v ce = v ge , i c = 1ma g fe forward transconductance ? 2.3 3.5 s v ce = 100 v, i c = 5.0a 250 v ge = 0v, v ce = 1200v 2.0 v ge = 0v, v ce = 10v, t j = 25c 1000 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns ? repetitive rating; pulse width limited by maximum junction temperature. ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. ( see fig. 13b ) ? v cc = 80%(v ces ), v ge = 20v, l = 10h, r g =50 w , (see fig. 13a)
IRG4PH20K www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics load current ( a ) 0.1 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 150 c j t = 25 c j 0 4 8 12 16 0.1 1 10 100 f, frequency (khz) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125?c t = 90? c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 15w 1 10 100 6 8 10 12 14 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j
IRG4PH20K 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 2.0 3.0 4.0 5.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 10 c i = a 5 c i = a 2.5 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration ( sec ) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 3 6 9 12 t , case temperature ( c) maximum dc collector current(a) c
IRG4PH20K www.irf.com 5 fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 1 10 100 0 200 400 600 800 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 0.70 0.75 0.80 0.85 0.90 0.95 r , gate resistance (ohm) total switching losses (mj) g v = 960v v = 15v t = 25 c i = 11a cc ge j c 0 5 10 15 20 25 30 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 11a cc c r g , gate resistance ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = 50ohm v = 15v v = 960v g ge cc i = a 10 c i = a 5 c i = a 2.5 c w
IRG4PH20K 6 www.irf.com fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa 1 10 100 1 10 100 1000 10000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c 0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 i , collector current (a) total switching losses (mj) c r = 50ohm t = 150 c v = 960v v = 15v g j cc ge w
IRG4PH20K www.irf.com 7 960v 4 x i c @ 25c d.u.t. 50v l v * c ? ? * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 960v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts o n off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 960v
IRG4PH20K 8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice.6/98 case outline and dimensions to-247ac dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m , 1982. 2 co n tr ollin g dim ensio n : inch . 3 dimensions are show n m illim et er s (in ch es). 4 conforms to jedec outline t o-247ac . lead assignments 1 - g a t e 2 - collector 3 - em itt er 4 - collector * longer leaded (20mm) version available (to-247ad) to order add "-e" suffix to part number
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